SK32N Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea SK32N---SK310N
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
REVERSE VOLTAGE: 20 - 100 V
FORWARD CURRENT: 3.0 A
FEATURES
Schottky barrier rectifier
Guardring protection
Low forward voltage
Reverse energy tested
High current capability
Extremely low thermal resistance
MECHANICAL DATA
Case: SMC molded plastic body 1111
Polarity: Color band denotes cathode end
Mounting position: ANY
NSMC
7.0 0.3
8.1 0.3
1.5 0.3
0.25 0.06
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
SK32N SK33N ^{SK34N SK35N SK36N SK38N SK39N SK310N} UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at
T_L=90
V_RRM
V_RWS
V_DC
I_F(AV)
Peak forward surge current 8.3ms single half-
sine-wave
I_FSM
Maximum instantaneous forward voltage
at I_FM=3.0A (NOTE1)
V_F
Maximum DC reverse current T_J=25
I_R
at rated DC blocking voltage T_J=125
Maximum thermal resistance
R _JL
Operating temperature range
T_J
Storage temperature range
T_STG
NOTE: 1.Pulse test: Pulse width 300us,duty cycle 1 %
20
30
14
21
20
30
0.55
40
50
60
28
35
42
40
50
60
3.0
100.0
0.75
0.5
20.0
17.0
- 55 ---- +125
- 55 ---- +150
80 90 100
V
56 63 70
V
80 90 100
V
A
A
0.85
V
mA
o_C/W
o_C
o_C
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