SGBPC35005 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – THREE - PHASE SILICON BRIDGE

Diode Semiconductor Korea SGBPC35005---SGBPC3516
THREE - PHASE SILICON BRIDGES
FEATURES
Rating to 1600 V PRV
Surge overload rating to 500 Am peres peak
Ideal for printed circuit board
Reliable low c os t cons truc tion utilizing m olded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 m ethod 208
High case dielectric strength of 2200 VRMS
V OLTAGE RANGE: 50 --- 1600 V
CURRENT: 35.0 A
SGBPC35
6.4± 0.2
25.1± 0.3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unless otherwise specified.
0.8± 0.1
Dimensions in millimeters
M axim um recurrent peak reverse voltage
M axim um RM S voltage
M axim um DC blocking voltage
M axim um average forward
Output current @ T_A=25
P eak forward surge current
8.3m s single half-sine-wave
superim posed on rated load
M axim um instantaneous forward voltage
@ 12.0 A
M axim um reverse current
@ T_A = 25
at rated DC bloc k ing voltage @T_A=100
Therm al res is tanc e junc tion to cas e at
DC Operation per bridge
Therm al res is tanc e c as e to heats ink
m ounting s urfac e,s m ooth,flat and
gread
SGBPC
35005
SGBPC
3501
SGBPC SGBPC
3502 3504
SGBPC SGBPC
3506 3508
SGBPC SGBPC
3510 3512
SGBPC
3514
SGBPC
3516
UNITS
V_RRM ⁵⁰
V_RMS ³⁵
V_DC ⁵⁰
I_{F(A V )}
100 200 400 600 800 1000 1200 1400 1600 V
70
140 280 420 560 700 840 980 1120
V
100 200 400 600 800 1000 1200 1400 1600 V
35.0
A
I _FSM
V_F
I_R
R_JC
500.0
1.19
10.0
5.0
1.16
A
V
μA
mA
K/W
R_CS
0.2
K/W
Operating junction tem perature range
Storage tem perature range
T_J
T_STG
- 40 ---- + 150
- 40 ---- + 150
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