SF1010C Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SUPER FAST RECTIFIERS

Diode Semiconductor Korea
SF1010C - - - SF1060C
SUPER FAST RECTIFIERS
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 10 A
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC TO-220AB,molded plastic
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: As marked
Weight: 0.08 ounce, 2.24 grams
Mounting position: Any
TO-220AB
10.2± 0.2
? 3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1 23
2.6± 0.2
0.9± 0.1
2.5± 0.1
PIN 1
PIN 3
0.5± 0.1
CASE
PIN 2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SF
1010C
SF
1015C
SF
1020C
SF
1030C
SF SF
1040C 1050C
SF
1060C
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 100
V_RMS 70
V_DC 100
Maximum average forw ard rectified current
@T_C=100
Peak forw ard surge current
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 5.0A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
150 200 300 400 500 600 V
105 140 210 280 350 420
V
150 200 300 400 500 600
V
10
A
125
0.975
1.3
10
400
35
70
3.0
- 55 ----- + 150
- 55 ----- + 150
A
1.7
V
A
ns
50
pF
/W
www.diode.kr