SD103AX Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Schottky Barrier Diode

Diode Semiconductor Korea
Schottky Barrier Diode
SD103AX
FEATURES
z Low forward voltage drop.
Pb
Lead-free
z Guard ring construction for transient protection.
z Low reverse recovery time.
z Low reverse capacitance.
APPLICATIONS
z Schottky barrier application.
SOD-523
ORDERING INFORMATION
Type No.
Marking
SD103AX
S4
Package Code
SOD-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
Unit
DC Reverse voltage
V_R
Continuous forward current
I_F
Repetitive peak forward current @t≤1.0s _IFRM
Total power dissipation
P_tot
Total resistance junction to ambient
R_θJA
Junction temperature
T_j
Storage temperature
T_stg
40
350
1
400
300
125
-65-125
V
mA
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol Min.
V_(BR)R
40
V_F
I_R
C_d
t_rr
Typ. Max. Unit
V
0.37
V
0.60
5.0 μA
50
pF
10
ns
Conditions
I_R=100μA
I_F=20mA
I_F=200mA
V_R=30V
V_R=0V,f=1MHz
I_F=I_R=50mA,R_L=100Ω
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