SBLB530 Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea
SBLB530 - - - SBLB5100
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 --- 100 V
CURRENT: 5.0 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC D²PAK,molded plastic
Terminals: Solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight: 0.087 ounces,2.2 gram
Mounting position: Any
D²PAK
10.2± 0.2
4
PIN
1
1.3± 0.1
0.8± 0.1
2
5.0± 0.5
1
3
4.5± 0.2
1.4± 0.2
0.4± 0.1
0.1± 0.1
2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 _{ambient temperature unless otherwise specified.}
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
T_C=95
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load T_J=125
Maximum instantaneous forw ard voltage
@ 5.0A
Maximum reverse current
@T_C=25
at rated DC blocking voltage @T_C=100
Typical thermal resistance (Note1)
Operating junction temperature range
Storage temperature range
Note: 1. Thermal resistance junction to case.
SBLB SBLB SBLB SBLB SBLB SBLB SBLB SBLB
530 535 540 545 550 560 580 5100
UNITS
V_RRM ^{30 35 40 45 50}
60 80 100
V
V_RMS ^{21 25 28 32 35}
42 56 70
V
V_DC ^{30 35 40 45 50}
60 80 100
V
I_F(AV)
5.0
A
I_FSM
V_F
I_R
R_θJC
T_J
T_STG
175
0.55
0.70
0.5
33
3.0
-55--- + 150
-55--- + 150
A
0.85
V
mA
/W
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