SBL830 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 8.0A SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea
SBL830---SBL8100
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 --- 100 V
CURRENT: 8.0 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC TO--220AC,molded plastic
Terminals: Leads solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight: 0.069 ounces,1.96 gram
Mounting position: Any
TO - 220AC
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1
2
2.6± 0.2
0.9± 0.1
5.0± 0.1
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SBL
830
SBL
835
SBL
840
SBL
845
SBL
850
SBL
860
SBL
870
SBL
880
SBL
890
SBL
8100
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
T_C=95
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load T_J=125
Maximum instantaneous forw ard voltage
@ 8.0A
Maximum reverse current
@T_C=25
at rated DC blocking voltage @T_C=100
Typical thermal resistance (Note1)
Operating junction temperature range
Storage temperature range
Note: 1. Thermal resistance junction to case.
V_RRM 30 35 40
V_RMS 21 25 28
V_DC 30 35 40
I_F(AV)
I_FSM
V_F
I_R
R_θJC
T_J
T_STG
0.55
45 50 60 70
32 35 42 49
45 50 60 70
8.0
200
0.70
0.5
55
6.9
-55--- + 150
-55--- + 150
80 90 100 V
56 63 70
V
80 90 100 V
A
A
0.85
V
mA
/W
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