SBL3030PT Datasheet, PDF (1/2 Pages) Diodes Incorporated – 30A SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea SBL3030PT---SBL30100PT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 --- 100 V
CURRENT: 30 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC TO-247AD,molded plastic
Terminals: Leads solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight: 0.223 ounce, 6.3 grams
Mounting position: Any
TO-247AD(TO-3P)
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
3.6± 0.15
PIN
1
2
3
3.0± 0.1
2.2± 0.15
1.2± 0.15
2.4± 0.2
5.4± 0.15
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SBL SBL SBL SBL SBL SBL SBL SBL
3030PT 3035PT 3040PT 3045PT 3050PT 3060PT 3080PT 30100PT
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
T_C=100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 15 A
Maximum reverse current
@T_C=25
at rated DC blocking voltage @T_C=100
Typical thermal resistance (Note1)
Operating junction temperature range
Storage temperature range
Note: 1. Thermal resistance junction to case.
V_RRM 30
V_RMS 21
V_DC 30
I_F(AV)
I_FSM
V_F
I_R
R_θJC
T_J
T_STG
35 40
25 28
35 40
0.55
45 50 60
32 35 42
45 50 60
30
275
0.75
1.0
75
1.5
-55--- + 125
-55--- + 150
80 100
V
56 70
V
80 100
V
A
A
0.85
V
mA
/W
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