SBL1630CT Datasheet, PDF (1/2 Pages) Diodes Incorporated – 16A SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea SBL1630CT---SBL16100CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 --- 100 V
CURRENT: 16 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC TO-220AB,molded plastic
Terminals: Leads solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight: 0.08ounce, 2.24 grams
Mounting position: Any
TO-220AB
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1 23
2.6± 0.2
0.9± 0.1
2.5± 0.1
0.5± 0.1
PIN 1
PIN 3
CASE
PIN 2
Positive CT
PIN 1
PIN 3
CASE
PIN 2
Negative CT
Suffix "A"
PIN 1
PIN 3
Doubler
Suffix "D"
CASE
PIN 2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SBL SBL SBL SBL SBL SBL SBL SBL
1630CT 1635CT 1640CT 1645CT 1650CT 1660CT 1680CT 16100CT
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
T_C=95
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load T_J=125
Maximum instantaneous forw ard voltage
@ 8.0A
Maximum reverse current
@T_C=25
at rated DC blocking voltage @T_C=100
Typical thermal resistance (Note1)
Operating junction temperature range
Storage temperature range
Note: 1. Thermal resistance junction to case.
V_RRM 30
V_RMS 21
V_DC 30
I_F(AV)
I_FSM
V_F
I_R
R_θJC
T_J
T_STG
35 40
25 28
35 40
0.55
45 50 60
32 35 42
45 50 60
16
250
0.75
0.5
50
2.0
-55--- + 150
-55--- + 150
80 100
V
56 70
V
80 100
V
A
A
0.85
V
mA
/W
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