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SB120S Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – 1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere)
Diode Semiconductor Korea
SB120S- - - SB1A0S
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC A-405,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.008 ounces,0.23 grams
Mounting position: Any
VOLTAGE RANGE: 20 --- 100 V
CURRENT: 1.0 A
A-405
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
(see fig.1)
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load @TJ=125
Maximum instantaneous forward voltage
@ 1.0A
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
Maximum reverse current
@TA=25
IR
at rated DC blocking voltage @TA=100
Typical junction capacitance (Note1)
CJ
Typical thermal resistance (Note2)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermalresistance junction to ambient
SB
120S
SB
130S
SB SB SB SB
140S 150S 160S 170S
SB
180S
SB
190S
SB
1A0S
UNITS
20 30 40 50 60 70 80 90 100 V
14 21 28 35 42 49 56 63 70 V
20 30 40 50 60 70 80 90 100 V
1.0
A
40.0
A
0.5
10.0
110
- 55 --- + 125
0.7
0.85
V
0.5
mA
5.0
80
pF
50
/W
- 55 --- + 150
- 55 --- + 150
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