S9018W Datasheet, PDF (1/3 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor
S9018W
FEATURES
z High current gain bandwidth product.
z power dissipation.(P_C=200mW)
Pb
Lead-free
APPLICATIONS
z NPN epitaxial silicon transistor.
ORDERING INFORMATION
Type No.
Marking
S9018
J8
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V_CBO
Collector-Base Voltage
25
V
V_CEO
Collector-Emitter Voltage
18
V
V_EBO
Emitter-Base Voltage
4
V
I_C
Collector Current -Continuous
50
mA
P_C
Collector Dissipation
200
mW
T_j,T_stg
Junction and Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions MIN _{TYP MAX}
Collector-base breakdown voltage _{V(BR)CBO IC=100μA,IE=0}
25
Collector-emitter breakdown voltage _{V(BR)CEO IC=0.1mA,IB=0}
18
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100μA,I_C=0
4
Collector cut-off current
I_CBO
V_CB=20V,I_E=0
0.1
Collector cut-off current
I_CEO
V_CE=15V,I_B=0
0.1
Emitter cut-off current
I_EBO
V_EB=3V,I_C=0
0.1
DC current gain
h_FE
V_CE=5V,I_C=1mA
70
190
Collector-emitter saturation voltage _VCE(sat) I_C=10 mA, I_B= 1mA
0.5
Base-emitter saturation voltage
V_BE(sat)
I_C=10 mA, I_B= 1mA
1.4
Transition frequency
V_CE=5V, I_C= 5mA
f_T
f=400MHz
600
UNIT
V
V
V
μA
μA
μA
V
V
MHz
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