S5817J Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea
S5817J- - -S5819J
SCHOTTKY BARRIER RECTIFIERS
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC SMAJ,molded plastic
Terminals: Solderable per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Mounting position: Any
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
SMAJ
4.3± 0.1
5.6± 0.2
1.3± 0.2
0.2± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
S5817J
Device marking code
S17
Maximum recurrent peak reverse voltage
V_RRM
20
Maximum RMS voltage
V_RMS
14
Maximum DC blocking voltage
V_DC
20
Maximum average forw ard rectified current
@T_L=90
I_F(AV)
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
I_FSM
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
@ 3.0A ^VF
0.45
0.75
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
S5818J
S18
30
21
30
1.0
25
0.55
0.875
1.0
10
110
50
- 55 ---- + 125
- 55 ---- + 150
S5819J
S19
40
28
40
UNITS
V
V
V
A
A
0.60
V
0.90
mA
pF
/W
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