S5817 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea
S5817- - -S5819
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 1.0 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--214AC,molded plastic
Terminals: Solderable per
MIL- STD-202,method 208
Polarity: Color band denotes cathode
Weight: 0.002 ounces, 0.064 gram
Mounting position: Any
SMA(DO-214AC)
4.5± 0.1
5.1± 0.2
1.3± 0.2
0.2± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
S5817
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T_L=90
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
Maximum instantaneous forw ard voltage @ 1.0A
z (Note 1)
@ 3.0A ^VF
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note2)
C_J
Typical thermal resistance (Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
20
14
20
0.45
0.75
S5818
30
21
30
1.0
25
0.55
0.875
1.0
10
110
50
- 55 ---- + 125
- 55 ---- + 150
S5819
40
28
40
UNITS
V
V
V
A
A
0.60
V
0.90
mA
pF
/W
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