S3AB Datasheet, PDF (1/2 Pages) Won-Top Electronics – 3.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE

Diode Semiconductor Korea
S3AB - - - S3MB
SURFACE MOUNT RECTIFIERS
111REVERSE VOLTAGE: 50 --- 1000 V
CURRENT: 3.0 A
FEATURES
Plastic package has underwriters laboratory
111 flammability classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111 250^oC/10 seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic over
1111passivated chip
Terminals:Solder plated, solderable per MIL-STD-
1111750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
DO - 214AA(SMB)
4 . 5± 0.1 5
5 . 3± 0.2
1.25± 0.2
0.2± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
S3AB ^{S3BB S3DB S3GB S3JB S3KB S3MB UNITS}
Maximumrecurrent peak reverse voltage
V_RRM
50
Maximum RMS voltage
V_RWS
35
Maximum DC Blocking Voltage
V_DC
50
Maximumaverage forw ord rectified current
V @ T_L=90^OC
Peak forw ard surge current @ T_L = 110°C 8.3ms
V single half-sine-w ave superimposed on rated
V load(JEDEC Method)
I_F(AV)
I_FSM
MaximumInstantaneous forw ard voltage at 3.0 A V _F
Maximum DC reverse current @T_A=25^oC
I_R
at rated DC blockjing voltage @T_A=100^oC
Typical junction capacitance
C_J
Typical thermal resitance (NOTE 2)
R JA
100 200 400 600 800 1000 V
70 140 280 420 560 700
V
100 200 400 600 800 1000 V
3.0
A
100
A
1.15
V
10
100
35
pF
40
o_C/W
Operating junction and storage temperature range T_JT_STG
-55--------+150
NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
2. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm²) copper pad areas
o_C
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