S1AB Datasheet, PDF (1/2 Pages) Shanghai Sunrise Electronics – SURFACE MOUNT GLASS PASSIVATED RECTIFIER

Diode Semiconductor Korea
S1AB --- S1MB
SURFACE MOUNT RECTIFIERS
REVERSE VOLTAGE: 50 - 1000 V
CURRENT: 1.0 A
FEATURES
Plastic package has underwriters laboratory
111 flammability classifications
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
High temperature soldering:
1 260^oC/10 seconds at terminals
SMB
4 . 5± 0.1 5
5 . 3± 0.2
MECHANICAL DATA
Case:JEDEC SMB,molded plastic over
1111passivated chip
Terminals:Solder Plated, solderable per MIL-STD-
1111750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 grams
1.25± 0.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
0.2± 0.05
Dimensions in millimeters
S1AB S1BB S1DB S1GB S1JB S1KB S1MB _UNITS
Maximumrecurrent peak reverse voltage
V_RRM
50
MaximumRMS voltage
V_RMS
35
Maximum DC blocking voltage
V_DC
50
Maximumaverage forw ord rectified current
V @TL=110
I_F(AV)
Peak forw ard surge current @ T _L = 110°C
V 8.3ms single half-sine-w ave superimposed I_FSM
V on rated load (JEDEC Method)
Maximuminstantaneous forw ard voltage at 1.0A V_F
Maximum DC reverse current @T_A=25^oC
I_R
at rated DC blockjing voltage @T_A=125^oC
Typical junction capacitance(NOTE 1)
C_J
Typical thermal resitance (NOTE 2)
R JA
100 200 400 600 800 1000 V
70 140 280 420 560 700
V
100 200 400 600 800 1000 V
1.0
A
30
A
1.1
V
1.0
50
12
pF
50
o_C/W
Operating junction and storage temperature range T_JT_STG
-55--------+150
NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0volts
2.Thermal resistance form junction to ambient and junction to lead P.C.B mounted on 0.27"X0.27"(7.0X7.0mm2) copper pad areas.
o_C
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