RU4Y Datasheet, PDF (1/2 Pages) Sanken electric – Fast-Recovery Rectifier Diodes

Diode Semiconductor Korea RU4Y(Z) --- RU4YX(Z)
HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 2.5 -- 4.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
RU4Y RU4Z RU4 RU4A RU4B RU4C RU4YX UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V_RRM 100
200
400
600
800 1000
V_RMS
70
140
280
420
560
700
Maximum DC blocking voltage
V_DC 100
200
400
600
800 1000
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
3.5
3.0
2.5
Peak forw ard surge current
8.3ms single half-sine-w ave
I_FSM
70.0
50.0
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maximum reverse recovery time (Note1)
t_rr
1.3
1.5
10.0
300.0
100
1.6
50.0
500.0
Typical junction capacitance (Note2)
C_J
70
50
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJL
T_J
8
- 55 ----- + 150
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
- 55 ----- + 150
4.IF(AV)=2.0A
100
V
70
V
100
V
4.0
A
100.0
A
0.85 ⁴⁾
V
10.0
A
300.0
50
ns
pF
̼ͤ
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