RU30Z Datasheet, PDF (1/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – High Efficiency Rectifiers

Diode Semiconductor Korea RU30Z(Z) --- RU30A(Z)
HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with freon, alcohol, ls opropand
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-27, m olded plastic
Term inals: Axial leads,s olderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces, 1.15grams
Mounting: Any
VOLTAGE RANGE: 200--- 600 V
CURRENT: 3.5 , 2.0 A
DO - 27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
RU30Z
RU30
RU30A
UNITS
Maximum peak repetitive reverse voltage
V_RRM
Maximum RMS voltage
V_RMS
Maximum DC blocking voltage
V_DC
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
I_F(AV)
Peak f orw ard surge current
8.3ms single half-sine-w ave
superimplsed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_FSM
V_F
I_R
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJL
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A , I_R=1A, I_rr=0.25A
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient
200
140
200
3.5
80.0
0.97
400
600
V
280
420
V
400
600
V
2.0
A
200.0
A
0.95
10.0
300.0
100
70
10
- 55 ----- + 150
- 55 ----- + 150
V
A
ns
50
pF
̼ͤ
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