RS1AB Datasheet, PDF (1/2 Pages) Shanghai Sunrise Electronics – SURFACE MOUNT FAST SWITCHING RECTIFIER

Diode Semiconductor Korea
RS1AB - - - RS1MB
SURFACE MOUNT RECTIFIERS
REVERSE VOLTAGE: 50 --- 1000 V
CURRENT: 1.0A
FEATURES
Plastic package has underwriters laborator
111
flammabilityclassification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111 250^oC/10 seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic over
1111passivated chip
Terminals:Solder plated, solderable per MIL-STD-
1111750, Method 2026
Polarity: color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
DO - 214AA(SMB)
4 . 5± 0.1 5
5 . 3± 0.2
1.25± 0.2
0.2± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
RS1AB RS1BB RS1DB RS1GB RS1JB RS1KB RS1MB ^UNITS
Maximumrecurrent peak reverse voltage
V_RRM
50
MaximumRMS voltage
V_RWS
35
MaximumDCblocking voltage
Maximumaverage forw ord rectified current
c @ T_L=90^OC
Peak forward surge current 8.3ms single
c half-sine-w ave superimposed on rated
c load
V_DC
50
I_F(AV)
I_FSM
Maximuminstantaneous forw ard voltage at 1.0A V_F
100
200 400 600 800 1000
V
70
140 280 420 560 700
V
100
200 400 600 800 1000
V
1.0
A
30.0
A
1.30
V
MaximumDCreverse current @T_A=25^oC
at rated DCblocking voltage @T_A=125^oC
Maximumreverse recovery time (NOTE1)
Typical junction capacitance (NOTE 2)
Typical thermal resitance (NOTE3)
I_R
t_rr
C_J
R _JA
R _JL
Operating junction and storage temperature range T_JT_STG
5.0
A
50.0
150
250
500
ns
10
7.0
pF
105
o_C/W
32
- 55 ------ + 150
o_C
NOTE: 1.Rev erse recov ery time test conditions:I_F=0.5A,I_R=1.0A,I_rr=0.25A
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.2''X0.2''(5.0X5.0mm²) copper pad areas
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