RP1HZ Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – HIGH EFFICIENCY RECTIFIER

Diode Semiconductor Korea
RP1H(Z)
HIGH EFFICIENCY RECT IFIER
VOLTAGE RANGE: 2000 V
CURRENT: 0.1 A
FEATURES
Diffused junction
Low leakage
Low forward voltage drop
High crrent capability
Eas ily cleaned with freon, alcohol, ls opropand
and s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO-15, m olded plas tic
Term inals : Axial leads ,s olderable per
MIL-STD-202, Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces , 0.39 gram s
Mounting: Any
DO - 15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum peak repetitive reverse voltage
V_RRM
Maximum RMS voltage
V _{R MS}
Maximum DC blocking voltage
V_DC
Maximum average forw ard rectif ied current
9.5mm lead length,
Peak f orw ard surge current
@T_A=75
I_{F (AV)}
10ms single half -sine-w ave
I_{F SM}
superimposed on rated load @T_J=125
Maximum instantaneous f orw ard voltage
@ 0.1A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time
(Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_{θ J L}
T_J
Storage temperature range
T_STG
N OTE: 1.Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH _Z and applied rev erse v oltage of 4.0V D C .
3.Therm al resistance junction to am bient .
RP1H
2000
1400
2000
0.1
5.0
7.0
20.0
200.0
50
20
15
- 55 ----- + 150
- 55 ----- + 150
UNITS
V
V
V
A
V
V
A
ns
pF
̼ͤ
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