RM2Z Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

Diode Semiconductor Korea RM2Z(Z)---RM2C(Z)
PLASTIC SILICON RECTIFIER
VOLTAGE RANGE: 200 --- 1000 V
CURRENT: 1.2 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15L,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.017 ounces,0.48 grams
Mounting position: Any
DO - 15L
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
RM2Z
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead lengths,
@T_A=75
Peak forw ard surge current
V_RRM
200
V_RMS
140
V_DC
200
I_(AV)
8.3ms single half-sine-w ave
superimposed on rated load @T_j=125
Maximum instantaneous forw ard voltage
at 1.2 A
I_FSM
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Typical junction capacitance (Note1)
C_J
Typical thermal resistance (Note2)
Operating junction temperature range
R_θjA
T_j
Storage temperature range
T_STG
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
RM2
400
280
400
RM2A
600
420
600
1.2
RM2B
800
560
800
RM2C
1000
700
1000
UNITS
V
V
V
A
100
0.91
10.0
50
30
50
- 55 ---- + 150
- 55 ---- + 150
A
V
A
pF
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