RG2Y Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

Diode Semiconductor Korea RG2Y(Z)--- RG2A(Z)
HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with freon, alcohol, ls opropand and
similar solvents
MECHANICAL DATA
Case: JEDEC DO-15, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting: Any
VOLTAGE RANGE: 70 --- 600 V
CURRENT: 1.5 --- 1.0 A
DO - 15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RG2Y
Maximum peak repetitive reverse voltage
V_RRM
70
Maximum RMS voltage
V_RMS
49
Maximum DC blocking voltage
V_DC
70
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
@T_A=75
I_F(AV)
1.5
8.3ms single half-sine-w ave
superimplsed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ I_F=I_F(AV)
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_FSM
V_F
1.1
I_R
Maximum reverse recovery time
(Note1)
t_rr
Typical junction capacitance
(Note2)
C_J
Typical thermal resistance
(Note3)
Operating junction temperature range
R_θJL
T_J
Storage temperature range
T_STG
NOTE: 1.Measured with I_F=0.5A, I_R=1A, Irr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
RG2Z
200
140
200
RG2
400
280
400
1.2
60.0
1.5
1.8
500
2500
50
50
12
- 55 ----- + 150
- 55 ----- + 150
RG2A
600
420
600
UNITS
V
V
V
1.0
A
A
2.0
V
A
ns
30
pF
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