English
Language : 

RBV6005 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS
Diode Semiconductor Korea
RBV6005 - - - RBV610
SILICON BRIDGE RECTIFIERS
FEATURES
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
Surge overload rating: 200 amperes peak
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
KBJ6
30± 0.3
3.2± 0.15
4.7± 0.25
3.7± 0.2
2.4± 0.2
1.0± 0.1
2.2± 0.2
10± 0.2 7.5± 0.2 7.5± 0.2
2.8± 0.2
0.8± 0.15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @TC=55
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 3.0 A
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
Operating junction temperature range
Storage temperature range
RBV RBV
6005 601
VRRM 50
100
VRMS 35
70
VDC 50
100
I(AV)
RBV
602
200
140
200
RBV RBV RBV
604 606 608
400 600 800
280 420 560
400 600 800
6.0
RBV
610
1000
700
1000
UNITS
V
V
V
A
IFSM
VF
IR
Tj
TSTG
200
1.0
10
200
- 55 ---- + 150
- 55 ---- + 150
A
V
µA
µA
www.diode.kr