RBV10005 Datasheet, PDF (1/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Silicon Bridge Rectifiers

Diode Semiconductor Korea ^{RBV10005 --- RBV1010}
SILICON BRIDGE RECT IFIERS
FEATURES
Rating to 1000V PRV
Surge overload rating to 300 Am peres peak
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique res ults in inexpens ive product
Lead s olderable per MIL-STD-202 m ethod 208
MECHANCAL DATA
Polarity:Sym bols m olded on body
Weight:0.23 ounces , 6.6 gram s
Mounting pos ition: Any
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 10 A
KBJ
30± 0.3
3.2± ^0.15
4.7± 0.25
3.7± 0.2
2.4± 0.2
1.0± 0.1
2.2± 0.2
10± 0.2 7.5± 0.2 7.5± 0.2
2.8± 0.2
0.8± 0.15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
RBV RBV
10005 1001
RBV RBV RBV
1002 1004 1006
RBV RBV
1008 1010
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard
Output current @T_C=55
Peak forw ard surge current
V_RRM 50
100
V_RMS 35
70
V_DC 50
100
I_{F (A V)}
8.3ms single half-sine-w ave
I_{F S M}
superimposed on rated load
Maximum instantaneous f orw ard voltage
at 5.0 A
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Typical junction capacitance per element
C_J
Typical thermal resistance
R_θJC
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTES:1.M easured at 1.0M H_Z and applied rev erse v oltage of 4.0V DC
2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.
200 400 600
140 280 420
200 400 600
10
300
1.0
1 0 .0
0.2
55
2.5
- 55 ---- + 150
- 55 ---- + 150
800 1000
V
560 700
V
800 1000
V
A
A
V
μA
mA
pF
/W
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