MUR805F Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – ULTRA FAST RECTIFIERS

Diode Semiconductor Korea
MUR805F- - - MUR860F
ULTRA FAST RECTIFIERS
FEATURES
Low cost
Diffused junction
Glass passivated junction
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC ITO-220AC
Terminals: solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.064 ounces,1.81 gram
Mounting position: Any
VOLTAGE RANGE: 50 --- 600V
CURRENT: 8.0A
ITO-220AC
10.2± 0.2
4.5± 0.2
3.1^+-00..12
PIN
1
2
4.0± 0.3
1.4± 0.1
0.6± 0.1
5.0± 0.1
2.6± 0.2
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Device marking code
MUR MUR MUR MUR MUR MUR MUR
805F 810F 815F 820F 830F 840F 860F _UNITS
U805F U810F U815F U820F U830F U840F U860F
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 50
V_RMS 35
V_DC 50
Maximum average forward rectified current
I_(AV)
total device (rated V_R),T_C=150
Peak forward surge current
8.3ms single half-sine-wave
I_FSM
superimposed on rated load
Maximum instantaneous
forward voltage (Note1)
@I_F=8.0A,T_C=25
I _F=8.0A,T_C=150
V_F
Maximum reverse current
@T_j=25
I_R
at rated DC blocking voltage
T _j=150
Maximum reverse recovery time (Note2)
t_rr
(Note3)
Typical thermal resistance junction to case
Operating junction temperature range
Storage temperature range
R_θjC
T_j
T_STG
NOTE:1.Pulse test:pulse width=300µs,duty cycle 2.0%
2. Measured with I_F=0.5A, I_R=1A, I_rr=0.25 A.
3. Measured with I_F=1.0A,di/dt=50A/µs.
100 150 200 300 400 600
V
70 105 140 210 280 420
V
100 150 200 300 400 600
V
8.0
A
100
A
0.975
0.895
5.0
250
25
35
3.0
- 65 ---- + 175
- 65 ---- + 175
1.30
1.00
1.50
1.20
V
10
µA
500
50
ns
60
2.0
/W
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