MP25005W Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Diode Semiconductor Korea MP25005(W)---MP2510(W)
SILICON BRIDGE RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 25.0 A
FEATURES
Rating to 1000V PRV
Surge overload rating to 300 Am peres peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
MP - W
METAL HEAT SINK
PLASTIC
1 .0± 0.1
28.6± 0.4
5.2 TYP.
17.9± 0.5
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @T_A=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 12.50 A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Operating junction temperature range
Storage temperature range
MP MP
25005 2501
(W) (W)
V_RRM 50
100
V_RMS 35
70
V_DC 50
100
I_F(AV)
MP
2502
(W)
200
140
200
MP
2504
(W)
400
280
400
25.0
MP
2506
(W)
600
420
600
MP
2508
(W)
800
560
800
MP
2510 UNITS
(W)
1000
V
700
V
1000
V
A
I_FSM
V_F
I_R
T_J
T_STG
300.0
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
A
V
μA
mA
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