MMDL770 Datasheet, PDF (1/3 Pages) E-Tech Electronics LTD – Schottky Barrier Diode

Diode Semiconductor Korea
Schottky Barrier Diode
MMDL770
FEATURES
z Low reverse leakage—I_R=200nA(Max.).
z Very Low Capacitance—1.0pF @20V.
Pb
Lead-free
z Extremely Low minority carrier lifetime.
z High reverse leakage—70V(min.)
APPLICATIONS
z For high-efficiency UHF and VHF detector applications.
ORDERING INFORMATION
Type No.
Marking
MMDL770
5H
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
DC reverse voltage
V_R
70
Power Dissipation
P_d
200
Thermal resistance,junction to ambient air R_θjA
635
Junction temperature
T_j
150
Storage temperature range
T_stg
-55-150
Unit
V
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse leakage current
Total capacitance
Symbol
V_(BR)R
V_F
I_R
C_T
Conditions
I_R=10μA
I_F=10mA
V_R=35V
V_R=20V,f=1.0MHz
Min.
70
Typ.
0.7
9.0
0.5
Max. Unit
V
1.0
V
200
nA
1.0
pF
www.diode.kr