MMDL301 Datasheet, PDF (1/3 Pages) ON Semiconductor – Silicon Hot-Carrier Diodes

Diode Semiconductor Korea
Schottky Barrier Diode
MMDL301
FEATURES
z Low reverse leakage—I_R=13nA(Typ).
Pb
Lead-free
z Very Low Capacitance—less than 1.5pF @15V.
z Extremely Low minority carrier lifetime—15ps(Typ).
z Pb-Free package is available.
APPLICATIONS
z For high-efficiency UHF and VHF detector applications.
ORDERING INFORMATION
Type No.
Marking
MMDL301
4T
SOD-323
Package Code
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Limits
DC reverse voltage
V_R
30
Power Dissipation
P_d
200
Thermal resistance,junction to ambient air R_θjA
635
Junction temperature
T_j
150
Storage temperature range
T_stg
-55-150
Unit
V
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse leakage current
Total capacitance
Symbol
V_(BR)R
V_F
I_R
C_T
Conditions
I_R=10μA
I_F=1.0mA
I_F=10mA
V_R=25V
V_R=15V,f=1.0MHz
Min.
30
Typ.
0.38
0.52
13
0.9
Max. Unit
V
0.45
V
0.6
200
nA
1.5
pF
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