MBRF530 Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea _{MBRF530---MBRF5100}
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 100 V
CURRENT: 5.0 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC ITO-220AC,m olded plas tic body
Term inals :Solderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.056 ounces,1.587 gram
ITO-220AC
10.2± 0.2
4.5± 0.2
3.1^+-00..12
PIN
1
2
4.0± 0.3
1.4± 0.1
0.6± 0.1
5.0± 0.1
2.6± 0.2
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^{am bient tem perature unles s otherwis e s pecified.}
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRF
530
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
535 540 545 550 560 580 5100
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
V_RRM 30
35
40 45 50
60 80 100
V
V_RMS 21
25
28 32 35
42 56 70
V
V_DC
30
35
40 45 50
60 80 100
V
Maximum average forw ard total device11111111
m rectif ied current @T_C = 125°C
I_F(AV)
5.0
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
I_FSM
125
A
Maximum forw ard
v oltage
(Note 1)
(I _F=5.0A)
V_F
0.70
0.80
0.85
V
Maximum reverse current
@T =25
A
at rated DC blocking voltage @T_A=100
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
I_R
R_{θJ C}
T_J
T_STG
0.1
15
3.0
- 55 ---- + 150
- 55 ---- + 150
mA
K/W
www.diode.kr