MBRF2530CT Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea _{MBRF2530CT---MBRF25100CT}
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 100 V
CURRENT: 30 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC ITO-220AB,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.08ounce, 2.24 grams
ITO-220AB
10.2± 0.2
4.5± 0.2
3.1^+-00..12
PIN
1 23
4.0± 0.3
1.4± 0.1
0.6± 0.1
2.6± 0.15
2.6± 0.2
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^{am bient tem perature unles s otherwis e s pecified.}
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m rectif ied current @T_C = 120°C
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
MBRF
2530CT
MBRF
2535CT
MBRF MBRF MBRF MBRF
2540CT 2545CT 2550CT 2560CT
MBRF MBRF
2580CT 25100CT
UNITS
V_RRM 30
35
40
45
50
60
80 100
V
V _{R MS}
21
25
28
32
35
42
56
70
V
V_DC
30
35
40
45
50
60
80 100
V
I_F(AV)
30
A
I_FSM
150
A
Maximum forward
v oltage
(Note 1)
(I_F=15A,T_C=25 )
(I_F=15A,TC=125 )
(I_{F=30A ,TC=25 )}
(I_F=30A,T_C=125 )
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
V_F
I_R
R _θJC
T_J
T_STG
-
-
0.82
0.73
0.2
40
0.75
0.85
0.65
-
-
-
-
-
1.0
50
1.5
- 55 ---- + 150
- 55 ---- + 150
V
mA
/W
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