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MBRF1030CT Datasheet, PDF (1/2 Pages) HY ELECTRONIC CORP. – SCHOTTKY BARRIER RECTIFIERS
Diode Semiconductor Korea MBRF1030CT---MBRF10100CT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 100 V
CURRENT: 10 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC ITO-220AB,molded plastic body
Term inals :Solderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.06ounce, 1.67 grams
ITO-220AB
10.2± 0.2
4.5± 0.2
3.1+-00..12
PIN
1 23
4.0± 0.3
1.4± 0.1
0.6± 0.1
2.6± 0.15
2.6± 0.2
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m rectif ied current @TC = 105°C
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
MBRF
1030CT
MBRF
1035CT
MBRF MBRF MBRF MBRF MBRF MBRF
1040CT 1045CT 1050CT 1060CT 1090CT 10100CT
UNITS
VRRM
30
35
40
45
50
60
90 100
V
V R MS
21
25
28
32
35
42
63
70
V
VDC
30
35
40
45
50
60
90 100
V
IF(AV)
10
A
IFSM
125
A
Maximum forward
(I F=5.0A,TC=125 )
v oltage
(IF=5.0A,TC=25 )
VF
(Note 1)
(I F=10A ,TC=25 )
0.57
0.70
0.84
0.70
0.80
0.95
-
0.85
V
-
Maximum reverse current
@T =25
C
at rated DC blocking voltage @TC=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.TC=100
IR
R θJC
TJ
TSTG
0.1
15
6.8
- 55 ---- + 150
- 55 ---- + 150
6.03)
4.4
mA
/W
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