MBRB830 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea MBRB830---MBRB8100
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 100 V
CURRENT: 8.0 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC D²PAK,m olded plas tic body
Term inals :Solderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.087 ounces,2.2 gram
D²PAK
10.2± 0.2
4
PIN
1
2
1.3± 0.1
0.8± 0.1
5.0± 0.5
1
3
4.5± 0.2
1.4± 0.2
0.4± 0.1
0.1± 0.1
2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^{am bient tem perature unles s otherwis e s pecified.}
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBRB MBRB MBRB MBRB MBRB MBRB MBRB MBRB
830 835 840 845 850 860 880 8100
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
V_RRM 30
35
40 45 50
60 80 100
V
V_RMS 21
25
28 32 35
42 56 70
V
V_DC
30
35
40 45 50
60 80 100
V
Maximum average forw ard total device11111111
m rectif ied current @T_C = 125°C
I_F(AV)
8.0
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
I_FSM
150
A
Maximum forw ard
(I_F=8.0A ,TC=125 ⁾
v oltage
(Note 1)
(I _F=8.0A,T_C=25 )
V_F
(IF=16A ,TC=25 )
0.57
0.70
0.84
0.70
0.80
0.95
-
0.85
V
-
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
I_R
R_{θJ C}
T_J
T_STG
0.1
15
3.0
- 55 ---- + 150
- 55 ---- + 150
0.5
mA
50
K/W
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