MBRB2030CT Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea _{MBRB2030CT---MBRB2060CT}
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 60 V
CURRENT: 20 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC D²PAK,m olded plas tic body
Term inals :Solderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.087 ounces,2.2 grams
D²PAK
10.2± 0.2
4
PIN
1.3± 0.1
123
0.8± 0.1
5.0± 0.5
1
3
4.5± 0.2
1.4± 0.2
0.4± 0.1
0.1± 0.1
2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^{am bient tem perature unles s otherwis e s pecified.}
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m rectif ied current @T_C = 135°C
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
Maximum forw ard
v oltage
(Note 1)
(IF=10A,TC=25 )
(I_F=10A,T_C=125 )
(IF=20A,TC=25 )
(I_F=20A,T_C=125 )
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
MBRB
2030CT
V_RRM
30
V _{R MS}
21
V_DC
30
I_F(AV)
I_FSM
V_F
I_R
R _θJC
T_J
T_STG
MBRB
2035CT
35
25
35
MBRB
2040CT
40
28
40
MBRB MBRB
2045CT 2050CT
45
50
32
35
45
50
MBRB
2060CT
UNITS
60
V
42
V
60
V
20
A
150
-
0.57
0.84
0.72
0.1
15
2.0
- 55 ---- + 150
- 55 ---- + 150
0.80
0.70
0.95
0.85
0.15
150
A
V
mA
/W
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