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MBRB1635CT Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – DUAL SCHOTTKY RECTIFIERS
Diode Semiconductor Korea MBRB1635CT---MBRB1660CT
DUAL SCHOTTKY RECTIFIERS
VOLTAGE RANGE: 35 - 60 V
CURRENT: 16 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC D2PAK,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Weight: 0.087 ounces,2.2 gram
Pos ition: Any
D2PAK
10.2± 0.2
4
PIN
1.3± 0.1
123
0.8± 0.1
5.0± 0.5
1
3
4.5± 0.2
1.4± 0.2
0.4± 0.1
0.1± 0.1
2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
VRRM
V R MS
Maximum DC blocking voltage
VDC
Maximum average forw ard total device11111111
m rectif ied current @TC = 125°C
IF(AV)
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
IFSM
Maximum forw ard
(IF=8.0A,TC=25 )
voltage per leg
VF
(NOTE 1)
(IF=8.0A ,TC=125 )
MBRB
1635CT
35
25
35
MBRB
1645CT
45
32
45
MBRB
1650CT
50
35
50
16.0
MBRB
1660CT
60
42
60
150.0
0.63
0.57
0.75
0.65
UNITS
V
V
V
A
A
V
Maximum reverse current
@TC=25
IR
0.2
at rated DC blocking voltage @T =125
C
40
1.0
50
Maximum thermal resistance (NOTE 2)
RθJ C
1.5
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
- 55 ---- + 175
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case and thermal resistance f rom junction to ambient.
mA
/W
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