MBR730 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 7.5A SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea
MBR730 - - - MBR7100
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 100 V
CURRENT: 7.5 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC TO-220AC,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.064 ounces,1.81 gram
TO-220AC
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1
2
0.9± 0.1
5.0± 0.1
2.6± 0.2
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^{am bient tem perature unles s otherwis e s pecified.}
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
730
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
V_RRM 30
V_RMS 21
V_DC
30
Maximum average forw ard total device11111111
m rectif ied current @T_C = 125°C
I_F(AV)
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
I_FSM
MBR
735
MBR
740
MBR
745
MBR
750
MBR
760
MBR
780
MBR
7100
UNITS
35
40 45 50
60 80 100
V
25
28 32 35
42 56 70
V
35
40 45 50
60 80 100
V
7.5
A
150
A
Maximum forw ard
(I_F=7.5A ,TC=125 ⁾
v oltage
(Note 1)
(I _F=7.5A,T_C=25 )
V_F
(IF=15A ,TC=25 )
0.57
0.70
0.84
0.70
0.80
0.95
-
0.85
V
-
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
I_R
R_{θJ C}
T_J
T_STG
0.1
15
3.0
- 55 ---- + 150
- 55 ---- + 150
0.5
mA
50
K/W
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