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MBR6030PT Datasheet, PDF (1/2 Pages) Diodes Incorporated – 60A SCHOTTKY BARRIER RECTIFIER
Diode Semiconductor Korea MBR6030PT---MBR60100PT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 100 V
CURRENT: 60 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC TO-3P,m olded plas tic body
Term inals :Solderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.223 ounce, 6.3 grams
TO-3P(TO-247AD)
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
3.6± 0.15
PIN
1
2
3
3.0± 0.1
2.2± 0.15
1.2± 0.15
5.4± 0.15
0.6± 0.1
2.4± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m rectif ied current @TC = 105°C
Peak forw ard surge current
8.3ms single half sine-wave
superimposed on rated load
MBR MBR MBR MBR MBR MBR MBR MBR UNITS
6030PT 6035PT 6040PT 6045PT 6050PT 6060PT 6080PT 60100PT
VRRM
30
35
40
45
50
60
80 100
V
V R MS
21
25
28
32
35
42
56
70
V
VDC
30
35
40
45
50
60
80 100
V
IF(AV)
60
A
IFSM
500
A
Maximum forward voltage
VF
@ IF=30A,TC=25
Maximum reverse current
@T =25
A
at rated DC blocking voltage @TA=100
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Thermal resistance from junction to case.
IR
RθJ C
TJ
TSTG
0.62
0.75
20
200
1.4
- 55 ---- + 150
- 55 ---- + 150
0.85
V
mA
/W
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