MBR2070PT Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – DUAL SCHOTTKY RECTIFIERS

Diode Semiconductor Korea MBR2070PT---MBR20100PT
DUAL SCHOTTKY RECTIFIERS
FEATURES
High surge capacity.
For use in low voltage, high frequency inverters, free
111 wheeling, and polarity protection applications.
Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Case:JEDEC TO-3P(TO-247AD),molded plastic body
Terminals:Leads, solderable per MIL-STD-750,
11 Method 2026
Polarity: As marked
Weight: 0.223 ounce, 6.3 grams
Position: Any
VOLTAGE RANGE: 70 - 100 V
CURRENT: 20 A
TO-3P(TO-247AD)
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
3.6± 0.15
PIN
1
2
3
3.0± 0.1
2.2± 0.15
1.2± 0.15
2.4± 0.2
5.4± 0.15
A1
K
A2 ^A1
A2
0.6± 0.1
K
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
MBR2070PT MBR2080PT MBR2090PT MBR20100PT UNITS
Maximum recurrent peak reverse voltage
Maximumw orking peak reverse voltage
Maximum DC blocking voltage
Maximumaverage forw ard total device1
111rectified current @ T_C = 133
V_RRM
70
V_RWM
49
V_DC
70
I_F(AV)
80
90
56
63
80
90
20.0
100
V
70
V
100
V
A
Peak forw ard surge current 8.3 ms single half
b sine-w ave superimposed on rated load
I_FSM
150.0
A
Maximumforw ard
(I_F=10A,T_C=25 )
voltage per leg
(I_F=10A,T_C=125 )
(NOTE 1)
(I_F=20A,T_C=25 )
(I_F=20A,T_C=125 )
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=125
Maximum junction capacitance (NOTE2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. VR=5VDC,(test signal range 100KHz to 1MHz
V_F
I_R
C_T
T_J
T_STG
0.85
0.70
0.95
0.85
0.1
6.0
400
- 55 ---- + 150
- 55 ---- + 175
V
mA
pF
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