MBR2030PT Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea MBR2030PT---MBR2060PT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 60 V
CURRENT: 20 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC TO-3P(TO-247AD),m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.223 ounce, 6.3 grams
TO-3P(TO-247AD)
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
3.6± 0.15
PIN
1
2
3
3.0± 0.1
2.2± 0.15
1.2± 0.15
2.4± 0.2
5.4± 0.15
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^{am bient tem perature unles s otherwis e s pecified.}
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m rectif ied current @T_C = 135°C
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
Maximum forw ard
v oltage
(Note 1)
(IF=10A,TC=25 )
(I_F=10A,T_C=125 )
(IF=20A,TC=25 )
(I_F=20A,T_C=125 )
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
MBR
2030PT
V_RRM
30
V _{R MS}
21
V_DC
30
I_F(AV)
I_FSM
V_F
I_R
R _θJC
T_J
T_STG
MBR
2035PT
35
25
35
MBR
2040PT
40
28
40
MBR
2045PT
45
32
45
MBR
2050PT
50
35
50
MBR
2060PT
60
42
60
UNITS
V
V
V
20
A
150
-
0.57
0.84
0.72
0.1
15
2.0
- 55 ---- + 150
- 55 ---- + 150
0.80
0.70
0.95
0.85
0.15
150
A
V
mA
/W
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