MBR20150PT Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea _{MBR20150PT,MBR20200PT}
SCHOTTKY BARRIER RECTIFIERS
Reverse Voltage: 150,200V
Forward Current: 20A
FEATURES
. _{Metal-Semiconductor junction with guard ring}
. _{Epitaxial construction}
. _{Low forward voltage drop, low swithing losses}
. _{High surge capacity}
. _{For use in low voltage, high frequency inverters free}
wheeling, and polarity protection applications
._{The plastic material carries U/L recognition 94V-0}
MECHANICAL DATA
. _{Case: JEDEC TO-3P, molded plastic body}
. _{Terminals: Solderable per MIL-STD-}
750, Method 2026
. _{Polarity: As marked}
. _{Mounting Position: Any}
. _{Weight: 0.223 ounce, 6.3 grams}
TO-3P
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
3.6± 0.15
PIN
1
2
3
3.0± 0.1
2.2± 0.15
1.2± 0.15
5.4± 0.15
0.6± 0.1
2.4± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Parameter
Symbol
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward tolal device
rectified current @T_C=120°C
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load
Maximum instantaneous
forward voltage @ 10A
V_RRM
V_RWS
V_DC
I_(AV)
I_FSM
V_F
Maximum reverse current @T_A=25°C
at rated DC blocking voltage @T_A=100°C
I_R
Maximum thermal resistance (Note1)
R_θJC
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTES: 1. Thermal resistance from junction to case.
MBR20150PT
MBR20200PT
150
200
135
140
150
200
20
150
UNITS
V
V
V
A
A
0.95
0.2
50
1.5
-55 --- +150
-55 --- +150
V
mA
°C/W
°C
°C
www.diode.kr