MBR1680PT Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – DUAL SCHOTTKY RECTIFIERS

Diode Semiconductor Korea _{MBR1680PT---MBR16100PT}
DUAL SCHOTTKY RECTIFIERS
VOLTAGE RANGE: 80 - 100 V
CURRENT: 16 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC TO-3P,m olded plas tic body
Term inals :Solderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Weight: 0.223 ounce, 6.3 grams
Pos ition: Any
TO-3P
15.8± 0.2
8.0± 0.2
5.0± 0.15
2.0± 0.15
3.6± 0.15
PIN
1
2
3
3.0± 0.1
2.2± 0.15
1.2± 0.15
2.4± 0.2
5.4± 0.15
0.6± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
V_RRM
V _{R MS}
Maximum DC blocking voltage
V_DC
Maximum average forw ard total device11111111
m rectif ied current @T_C = 125°C
I_F(AV)
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
I_FSM
Maximum forw ard
MBR
1680PT
80
56
80
16
150
voltage per leg
(I_F=8.0A,T_C=25 ⁾
V_F
(NOTE 1)
0.85
Maximum reverse current
@T_C=25
I_R
1.0
at rated DC blocking voltage @T =125
C
100
Maximum thermal resistance (NOTE 2)
R_{θJ C}
1.5
Operating junction temperature range
T_J
- 55 ---- + 150
Storage temperature range
T_STG
- 55 ---- + 150
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case and thermal resistance f rom junction to ambient.
MBR
16100PT
100
70
100
UNITS
V
V
V
A
A
V
mA
/W
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