MBR1630 Datasheet, PDF (1/2 Pages) Diodes Incorporated – 16A SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea
MBR1630 - - - MBR16100
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE: 30 - 100 V
CURRENT: 16 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC TO-220AC,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.069 ounces,1.96 gram
TO-220AC
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1
2
2.6± 0.2
0.9± 0.1
5.0± 0.1
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^{am bient tem perature unles s otherwis e s pecified.}
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m rectif ied current @T_C = 125°C
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
MBR
1630
MBR
1635
MBR
1640
MBR MBR
1645 1650
MBR
1660
MBR
1690
MBR
16100
UNITS
V_RRM
30
35
40
45
50
60
90 100
V
V _{R MS}
21
25
28
32
35
42
63
70
V
V_DC
30
35
40
45
50
60
90 100
V
I_F(AV)
16
A
I_FSM
150
A
Maximum forw ard
(IF=16A,TC=25 )
v oltage
(Note 1)
V_F
(IF=16A,TC=125 )
0.63
0.57
0.75
0.65
0.85
V
-
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
I_R
R _θJC
T_J
T_STG
0.2
1.0
40
50
1.5
- 55 ---- + 150
- 55 ---- + 175
mA
/W
www.diode.kr