MBR1020CT Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – 10 AMPERES SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea MBR1020CT---MBR1060CT
DUAL SCHOTTKY RECTIFIERS
VOLTAGE RANGE: 20 - 60 V
CURRENT: 10 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC TO-220AB,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Weight: 0.071 ounce, 2.006 gram s
Pos ition: Any
TO-220AB
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1 23
2.6± 0.2
0.9± 0.1
2.5± 0.1
0.5± 0.1
PIN 1
PIN 3
CASE
PIN 2
Positive CT
PIN 1
PIN 3
CASE
PIN 2
Negative CT
Suffix "A"
PIN 1
PIN 3
Doubler
Suffix "D"
CASE
PIN 2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR MBR MBR MBR MBR MBR MBR
1020CT 1030CT 1035CT 1040CT 1045CT 1050CT 1060CT
UNITS
Maximum recurrent peak reverse voltage
V_RRM 20
30
35
40
45
50
60
V
Maximum RMS V oltage
V_RMS 14
21
25
28
32
35
42
V
Maximum DC blocking voltage
V_DC
20
30
35
40
45
50
60
V
Maximum average forw ard total device11111111
m rectif ied current @T_C = 120°C
I_F(AV)
10
A
Peak forw ard surge current 8.3ms single half
b sine-w ave superimposed on rated load
I_FSM
125
A
Maximum forw ard
(I F=5.0A,TC=125 ⁾
voltage per leg
(NOTE 1)
(IF=5.0A ,TC=25 )
V_F
(I _{F=10 A ,TC=25} )
0.57
0.70
0.84
0.70
0.80
V
0.95
Maximum reverse current
@T_C=25
at rated DC blocking voltage @T =125
C
Maximum thermal resistance per leg
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. 2.0µ s pulse width, f =1.0KH_Z
3. Thermal resistance f rom junction to case.
I_R
R_{θJ C}
T_J
T_STG
0.1
15
3.0
- 55 ---- + 150
- 55 ---- + 150
mA
K/W
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