MBR1020 Datasheet, PDF (1/2 Pages) Micro Commercial Components – 10 Amp Schottky Barrier Rectifier 20 to 100 Volts

Diode Semiconductor Korea
MBR1020 - - - MBR10100
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE: 30 - 100 V
CURRENT: 10 A
FEATURES
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC TO-220AC,m olded plas tic body
Term inals :Solderable per MIL-STD-750,
1 1 Method 2026
Polarity: As m arked
Pos ition: Any
Weight: 0.069 ounces,1.96 gram
TO-220AC
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1
2
0.9± 0.1
5.0± 0.1
2.6± 0.2
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ^{am bient tem perature unles s otherwis e s pecified.}
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device
m rectif ied current @T_C = 125°C
Peak forw ard surge current 8.3ms single half
b sine-wave superimposed on rated load
Maximum forw ard
v oltage
(Note 1)
(I _F=10A,T_C=25 )
(I _F=10A,T_C=125 )
(I _F=20A ,T_C=25 )
(I _F=20A ,T_C=125 )
Maximum reverse current
@T =25
C
at rated DC blocking voltage @T_C=125
Maximum thermal resistance (Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance from junction to case.
3.TC=100
MBR
1020
MBR MBR MBR
1030 1035 1040
MBR MBR MBR
1045 1050 1060
MBR MBR
1090 10100
UNITS
V_RRM 20 30 35 40 45 50 60 90 100
V
V_RMS 14 21 25 28 32 35 42 63 70
V
V_DC 20 30 35 40 45 50 60 90 100
V
I_F(AV)
10
A
I_FSM
V_F
I_R
R _θJC
T_J
T_STG
150
-
0.57
0.84
0.72
0.1
15
0.80
0.70
0.95
0.85
2.0
- 55 ---- + 150
- 55 ---- + 150
0.80
0.65
0.95
0.75
6.0³⁾
A
V
mA
/W
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