LL4151 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diodes

Diode Semiconductor Korea
LL4151
SMALL SIGNAL SWITCHING DIODE
REVERSE VOLTAGE : 50 V
CURRENT: 0.15 A
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 mW power dissipation
MINI-MELF
Cathode indification
MECHANICAL DATA
Case: MINI-MELF,glass case
Polarity: Color band denotes cathode
Weight: 0.031 grams
3.4 +0.3
-0.1
0.4 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
V_R
V_RM
half w ave rectif ication w ith resistive load
I_F(AV)
V_R=0V
Forw ard surge current @ t_P=1µ s
I_FSM
Pow er dissipation
@ T_A=
P_tot
Junction temperature
T_J
Storage temperature range
T_STG
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
MIN
Forw ard voltage @ I_F=50mA
Leakage current
V_F
-
@ V_R=50V
@ V_R=50V T_J=150
Capacitance @ V_R=0V,f=1MHz,V_HF=50mV
Reverse breakdown voltage
tested with 5μA pulses
I_R
I_R
CJ
V_(BR)R
-
-
-
75.0
Reverse recovery time
from I_F=10mA to I_R=10mA to I_R=1mA
from I_F=10mA to I_R=1mA, V_R=6V. R_L=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V_RF=2V
t_rr
R_θJA
ηv
-
0.45
1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
LL4151
50
75
150¹⁾
2.0
500¹⁾
175
-55 --- +175
TYP
0.8
-
-
-
-
-
-
UNITS
V
V
mA
A
mW
MAX
UNITS
1.0
V
50
nA
50
μA
2.0
pF
-
V
4
ns
2
ns
500¹⁾
K/W
-
-
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