HER810T Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – HIGH EFFICIENCY RECTIFIERS

Diode Semiconductor Korea HER810T--- HER860T
HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE: 100 --- 600 V
CURRENT: 8.0 A
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC TO-220AC,molded plastic body
Terminals: Solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Weight: 0.064 ounces,1.96 gram
Mounting position: Any
TO - 220AC
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1
2
0.9± 0.1
5.0± 0.1
2.6± 0.2
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
810T
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V _RRM
100
V_RMS
70
V_DC
100
Maximum average forw ard rectified current
@T_C=75
Peak forw ard surge current
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 8.0A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJC
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
HER
820T
200
140
200
HER
840T
400
280
400
8.0
200
1.0
1.3
10
150
50
40
25
- 55 ---- + 150
- 55 ---- + 150
HER
860T
600
420
600
UNITS
V
V
V
A
A
1.7
V
A
100
ns
pF
/W
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