HER601G Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 6.0 AMPS. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS

Diode Semiconductor Korea HER601G--- HER608G
HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
FEATURES
Low cost
Low leakage
Glass passivated junction
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC R - 6,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.072 ounces,2.04grams
Mounting position: Any
R- 6
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
HER
601G
HER
602G
HER
603G
HER HER HER HER HER
604G 605G 606G 607G 608G
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 50
V_RMS 35
V_DC 50
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 6.0A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
100 200 300 400 600 800 1000 V
70 140 210 280 420 560 700 V
100 200 300 400 600 800 1000 V
6.0
A
200.0
1.0
1.3
10.0
200.0
60
100
12
- 55 ---- + 150
- 55 ---- + 150
A
1.7
V
A
70
ns
65
pF
/W
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