HER101GL Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – HIGH EFFICIENCY RECTIFIERS

Diode Semiconductor Korea _{HER101GL--- HER108GL}
HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Glass passivated junction
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC A-405,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.008 ounces,0.23 grams
Mounting position: Any
A - 405
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
HER
101GL
HER HER HER HER HER HER HER
102GL 103GL104GL105GL106GL107GL108GL
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM 50
V_RMS 35
V_DC 50
Maximum average forw ard rectified current
9.5mm lead length,
@T_A=75
Peak forw ard surge current
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 1.0 A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=125
Typical reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
100 200 300 400 600 800 1000 V
70 140 210 280 420 560 700 V
100 200 300 400 600 800 1000 V
1.0
A
30.0
1.0
1.3
5.0
100.0
50
20
60
- 55 ---- + 150
- 55 ---- + 150
A
1.7
V
A
75
ns
15
pF
/W
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