HER101G Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 1.0 AMP. GLASS PASSIVATED HIGH EFFICIENCY RECTIFIERS

Diode Semiconductor Korea _{HER101G---HER108G}
GLASS PASSIVATED RECTIFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FEATURES
Low cost
Glass passivated junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohil,Isopropanop
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34grams
Mounting position: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Dimensions in millimeters
HER
101G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximumaverage forward rectified current
9.5mmlead length, @T_A=75
Peak forw ard surge current
V_RRM
50
V_RMS
35
V_DC
50
I_F(AV)
8.3ms single half-sine-wave
I_FSM
superimposed on rated load @T_J=125
Maximuminstantaneous forward voltage
@1.0 A
V_F
Maximumreverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximym reverse capacitance (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R _JA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
HER
102G
100
70
100
1.0
HER
103G
HER
104G
HER
105G
HER
106G
HER
107G
HER
108G
UNITS
200 300 400 600 800 1000 V
140 210 280 420 560 700 V
200 300 400 600 800 1000 V
1.0
A
30.0
1.3
5.0
100.0
50
20
60.0
- 55---- +175
- 55---- +175
A
1.7
V
A
75
ns
15
pF
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