GL1A Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Surface Mount Si-Rectifiers

Diode Semiconductor Korea
GL1A - - - GL1M
SURFACE MOUNT RECTIFIERS
REVERSE VOLTAGE: 50 - 1000 V
CURRENT: 1.0 A
FEATURES
Plastic package has underwriters laboratory
111 flammability classifications
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111 250^oC/10 seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-213AA,molded plastic over
1111passivated chip
Terminals:Solder Plated, solderable per MIL-STD-
1111750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0014 ounces, 0.036 gram
DO - 213AA
SOLDERABLE ENDS
D2=D1
Đ0
Ē0.20
D2
0.5± 0.1
3.5± 0.2
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
GL1A GL1B GL1D GL1G GL1J GL1K GL1M ^UNITS
Maximumrecurrent peak reverse voltage
V_RRM
50
Maximum RMS voltage
V_RWS
35
Maximum DC blocking voltage
V_DC
50
Maximumaverage forw ord rectified current
V @TL=75
I_F(AV)
Peak forw ard surge current
V 8.3ms single half-sine-w ave superimposed I_FSM
V on rated load (JEDEC Method)
100 200 400 600 800
70 140 280 420 560
100 200 400 600 800
1.0
30
Maximuminstantaneous forw ard voltage at 1.0 A V_F
1.2
1.3
Maximum DC reverse current @T_A=25^oC
I_R
at rated DC blockjing voltage @T_A=125^oC
5.0
50.0
Typical junction capacitance(NOTE 2)
C_J
4.0
Typical reverse recovery time(NOTE3)
t _rr
1.5
Typical thermal resitance (NOTE 4)
R _JA
150
Operating junction temperature range
Storage temperature range
T_J
TSTG
-55--------+150
-55--------+150
NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0volts
2.Thermal resistance form junction to ambient and junction to lead P.C.B mounted on 0.27"X0.27"(7.0X7.0mm2) copper pad areas
3.Measured with IF=0.5A,IR=1.0A,Irr=0.25A.
4 Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
1000 V
700
V
1000 V
A
A
V
A
pF
S
o_C/W
o_C
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