GBU6A Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 100 Volts CURRENT - 6.0 Amperes)

Diode Semiconductor Korea GBU6A --- GBU6M
SILICON BRIDGE RECT IFIERS
FEATURES
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique
Plas tic m aterrial has U/L flam m ability clas s ification
94V-O
Mounting pos ition: Any
Glass passivated chip junctions
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
GBU
22.3± 0.3
3.7± 0.35
4 45°
3.8± 0.2
-
AC
+
2.5± 0.2
2.4± 0.2
1.2± 0.15
5.0± 0.3
0.5± 0.15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU
6A
GBU
6B
GBU
6D
GBU
6G
GBU
6J
GBU
6K
GBU
6M
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard Tc=100
output current
V_RRM 50
100 200 400 600 800 1000
V
V_RMS 35
70
140 280 420 560 700
V
V_DC 50
100 200 400 600 800 1000
V
I_{F (AV)}
6.0
A
Peak f orw ard surge current
8.3ms single half -sine-w ave
I_{F SM}
175.0
A
superimposed on rated load
Maximum instantaneous f orw ard voltage
at 3.0 A
V_F
1.0
V
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=125
I_R
Typical junction capacitance per leg (note 3)
C_J
5.0
μA
500.0
mA
211
94
pF
Typical thermal resistance per leg (note 2)
R_{θJ A}
7.4
/W
(note 1)
R_{θJ C}
2.2
Operating junction temperature range
T_J
- 55 ---- + 150
Storage temperature range
T_STG
- 55 ---- + 150
N OTE: 1. Unit case m ounted on 2.6x1.4x0.06" thick (6.5x3.5x0.15cm ) AI. Plate.
2. R ecom m ended mounting position is to bolt down on heatsink with silicone thermal com pound f or m aximum heat transf er with #6 screws
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
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