FR05-12 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea
FR05 -12 - - - FR05 - 20
FAST RECOVERY RECT IFIERS
VOLTAGE RANGE: 1200 --- 2000 V
CURRENT: 0.5 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon Alcohol,Is opropanol and
s im ilar s olvents
MECHANICAL DATA
Cas e:JEDEC DO--41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces ,0.34 gram s
Mounting pos ition: Any
DO - 41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maxim um recurrent peak revers e voltage
V_RRM
Maxim um RMS voltage
V _{R MS}
Maxim um DC blocking voltage
Maxim um average forward rectified current
9.5m m lead length,
@T_A=75
Peak forward s urge current
10m s s ingle half-s ine-wave
s uperim pos ed on rated load @T_J=125
V_DC
I_{F (AV )}
I_{F S M}
Maxim um ins tantaneous forward voltage
@ 0.5 A
V_F
Maxim um revers e current
@T_A=25
at rated DC blocking voltage @T_A=100
I_R
Maxim um revers e recovery tim e (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thernal res is tance
(Note3)
R_{θ J A}
Operating junction tem perature range
T_J
Storage tem perature range
T_STG
N OTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Meas ured at 1.0MH _Z and applied rev erse v oltage of 4.0V D C.
3. Thermal resistance f rom junction to am bient.
FR05
-12
1200
840
1200
FR05
-14
1400
980
1400
FR05
-15
1500
1050
1500
FR05
-16
1600
1120
1600
0.5
30.0
2.0
5.0
100.0
500
12
55
-55 ---- + 150
-55 ---- + 150
FR05
-18
1800
1260
1800
FR05
-20
2000
1400
2000
UNITS
V
V
V
A
A
V
A
ns
pF
/W
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