FDB101S Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SILICON BRIDGE RECTIFIERS

Diode Semiconductor Korea ^{FDB101S --- FDB107S}
SILICON BRIDGE RECTIFIERS
FEATURES
Rating to 1000V PRV
Surge overload rating to 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Lead: silver plated copper, solderde plated
Plastic material has UL flammability classification
94V-O
Polarity symbols molded on body
Weight: 0.016 ounces,0.45 grams
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
DB - S
1± 0.1
8.3± 0.1
5± 0.2
7.9± 0.2
6.4± 0.1
1.2± 0.3
10± 0.6
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resis tive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current @T_A=25
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.0 A
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I_F=0.5A,I_R=1A, I_rr=0.25A.
FDB
101S
V_RRM 50
V_RMS 35
V_DC 50
FDB
102S
100
70
100
FDB
103S
200
140
200
FDB FDB
104S 105S
400 600
280 420
400 600
FDB
106S
800
560
800
FDB
107S
1000
700
1000
UNITS
V
V
V
I_F(AV)
1.0
A
I_FSM
V_F
I_R
t _rr
T_J
T_STG
30.0
1.3
10.0
1.0
150
250
- 55 ---- + 125
- 55 ---- + 150
A
V
μA
mA
500
ns
www.diode.kr